| PART |
Description |
Maker |
| KMM5364005BSWG |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HY51V65173HGJT |
4Mx16|3.3V|4K|6|FP/EDO DRAM - 64M 4Mx16 | 3.3 | 4K的| 6 |计划生育/ EDO公司的DRAM - 6400
|
Citizen Finetech Miyota
|
| KMM5364003CKG KMM5364103CK KMM5364103CKG KMM536400 |
4M X 36 FAST PAGE DRAM MODULE, 50 ns, SMA72
4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V 4米36的DRAM上海药物研究所利用4Mx46M四中科院K/2K刷新V
|
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KMM5361203C2W |
1M x 36 DRAM SIMM(1M x 36 动RAM模块)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HSD8M32B4-10 HSD8M32B4-10L HSD8M32B4-12 HSD8M32B4- |
Synchronous DRAM Module 32Mbyte ( 8M x 32-Bit ) 144pin SO-DIMM based on 4Mx16, 4Banks, 4K Ref., 3.3V
|
http://
Hanbit Electronics Co.,Ltd.
|
| KMM5324000BSW |
4MBx32 DRAM Simm Using 4MBx16
|
Samsung Semiconductor
|
| KMM5324004BSW |
4MBx32 DRAM Simm Using 4MBx16
|
Samsung Semiconductor
|
| KMM5324004CSW |
4MBx32 DRAM Simm Using 4MBx16
|
Samsung Semiconductor
|
| KMM5362000B KMM5362000BG |
2M x 36 DRAM SIMM Memory Module
|
Samsung Electronics
|
| KMM5322200C2W |
2MBx32 DRAM Simm Using 1MBx16
|
Samsung Semiconductor
|
| KMM53232000CK |
32MBx32 DRAM Simm Using 16MBx4
|
Samsung Semiconductor
|
